HDT heterojunction solar technology will become the mainstream PV technology in the future
HDT solar cells has a bifacial structure design that can absorb the incident light and scattered light from both sides, By using a PECVD, a very thin intrinsic silicon passivation layer and a P-type silicon doped layer is formed on the upper side of the N-type monocrystalline silicon wafer after texturing and surface clean, and then a very thin intrinsic silicon passive layer and N-type silicon doped layer is deposited on the other side. After the deposition of amorphous silicon layer stacks, PVD magnetron sputtering coating technology is applied to deposit transparent oxide conductive film (TCO) and metal stack on both sides of the cells. At last, the metal grids on both sides are formed by our innovated metallization technology.
The integrated solution of heterojunction equipment adheres to the requirements of customers, providing the most suitable heterojunction technology and whole line equipment output service, or selling PECVD, PVD and other stand-alone equipment.
From the production point of view, HDT solar cells adopt low-temperature process, which is more environmentally friendly.